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  • Longdimm Ram 1600 4gb Ddr3 Memory 2014 New Product - China

    price: contact company for price

    Keywords:

    ddr ram , ddr ram module , pc ram modules , ddr ram memory , memory ddr memory , ddr memory, ram memory modules , computer memory , 1333mhz memory , ddr3 memory, ddr3 1333mhz 2gb, 1333mhz 1gb, 1333mhz 4gb, 1600mhz 4gb, ddr3 1333mhz 4gb, ddr3 8gb, 1600mhz 8gb , 1333mhz 8gb ddr ram

    Item Name:

    DDR3 Ram 1600Mhz 4GB desktop computer memory module

    DDR3 1600Mhz (PC3-12800) 4GB

    DDR3 1600Mhz (PC3-12800) 4GB 240Pins Long dimm / Desktop ram

    Brief description:

    DDR3 Ram 1600Mhz 4GB

    4GB 1600MHz DDR3 Non-ECC CL9 DIMM

    Part No.: KVR1600D3N9/4G

    Full compatibility Intel motherboard

    Original Chip: MT Hynix Samsung Elpida

    RMA rate less 1%

    5 years warranty

    Specifications:

    Memory Type: DDR3

    Memory Speed: 1600Mhz DDR3

    Memory Size: 4GB/4096MB

    Memory Channels: Dual

    Memory Socket: LONG DIMM

    Memory CAS Latency: 4-4-4-12

    Memory Timing:4-4-4-12

    Pins:240

    Voltage:1.5V

    Function: Non ECC Memory

    Chips: Hynix. Elpida. Micron. Samgsung. Infineon

    Package Details: Retail packing or bulk packing

    Delivery Date: 2-3 working days after buyer's payment is verified.

    Tested Details:

    This describes ValueRAM's 256x8bit 4GB (4096MB) DDR3-1600 CL9 SDRAM (Synchronous DRAM)

    memory module, based on sixteen 256x 8bit DDR3-1600 FBGA components. The SPD is programmed to JEDEC

    standard latency 1600Mhz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V.

    The electrical and mechanical specifications are as follows:

    FEATURES:

    JEDEC standard 1.5V ± 0.075V Power Supply

    VDDQ = 1.5V ± 0.075V

    800MHz fCK for 1600Mb/sec/pin

    8 independent internal bank

    Programmable CAS Latency: 5, 6, 7, 8, 9, 10

    Posted CAS

    Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

    Programmable CAS Write Latency(CWL) = 7(DDR3-1600)

    8-bit pre-fetch

    Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

    which does not allow seamless read or write [either on the fly using A12 or MRS]

    Bi-directional Differential Data Strobe

    Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

    On Die Termination using ODT pin

    Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

    Asynchronous Reset

    PCB : Height 1.180” (30.00mm), double sided component

    PERFORMANCE:

    CL(IDD) 9 cycles

    Row Cycle Time (tRCmin) 49.5ns (min.)

    Refresh to Active/Refresh Command Time (tRFCmin) 160ns

    Row Active Time (tRASmin) 36ns (min.)

    Power 1.380 W (operating)

    UL Rating 94 V - 0

    Operating Temperature 0o C to 85o C

    Storage Temperature -55o C to +100o C


    Company Contact:


    • Phone: 8613760338412

    • Address: Room No.365,3F,BLDG 4,SEG Technology Park,Huaqiang, Shenzhen, China

    • Email: Email


    Published date: January 2, 2014 -

    • Business Description: involved in international trade import export of goods, products, and services

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