Utsource Electronic Components Blf177 - USAprice: 21.45 Dollar US$
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.All leads are isolated from the flange.A marking code, showing
gate-source voltage (VGS) information is provided for matched pair applications. Refer to the hand
book 'General' section for further information.
>High power gain
>Low intermodulation distortion
>Easy power control
>Good thermal stability
>Withstands full load mismatch.
- Posted By: UTSOURCE HOLDING Co., Ltd
- Phone: 6267574001
- Address: 2321 W Norwood Pl, Alhambra, CA, USA
- Website: http://www.utsource.net
Published date: April 13, 2017 -
- Business Description: UTSOURCE is a professional purchasing B2B & B2C tools in electronic components field.UTSOURCE provides different types such as IC, Modules, RF transistors etc., and various product type's PDF parameter form as well as the related photographs, we also provide satisfying one-stop package service for customers.
Utsource Electronic Components Irf244General Electronics - UTSOURCE HOLDING Co., Ltd - USA - April 13, 2017 - 1.44 Dollar US$
1. Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. A...
Utsource Electronic Components Irfba1405pGeneral Electronics - UTSOURCE HOLDING Co., Ltd - USA - April 11, 2017 - 0.79 Dollar US$
1. Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this MOSFET a...
Utsource Electronic Components 2sc2166General Electronics - UTSOURCE HOLDING Co., Ltd - USA - April 11, 2017 - 0.96 Dollar US$
1. Description 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. 2. Features >High power gain: Gpe 13.8dB= 12V, P0 = 6W, f = 27MHz >Emitter ballasted construction fo...
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