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Shenzhen Quality Control Inspection Check Of Headset Electronics In Guangdong ProvinceServices - Testing / Monitoring - Eagle Eyes China Inspection Company - China (fujian ) - 198.00
Headset inspection methods and inspection standards Deformation: Deformation of plastic parts due to uneven force or stress during molding. Flash: due to injection molding process or mold reasons, resulting in the parting surface of the edge of the p...
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Zibo Aql Qc Inspection Service For Glass Cup Bottle In ChinaServices - Testing / Monitoring - Eagle Eyes China Inspection Company - China (fujian ) - 198.00
Samples were randomly taken from different trays or cartons. Check product workmanship, specifications, dimensions, and conduct corresponding tests. Glass products are broken, burst, gap, scraper must not accept. Glass products can not be deformed, m...
single crystal silicon bonding wafer Photos Catalog - WorldBid B2B Market
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Single Crystal Silicon Bonding WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter 2” 4” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Resistivity Ω . cm ≤ 0.0015 4 Diameter mm 50.8±0.2 100±0.3 5 Thickness μ m 425±25 625±25 6 Orientation 7 Primary length mm 16±1 32±2 8 TTV/...
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Fz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter mm 53- 150±0.2( 2” 3” 4” 5” 6”) 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Resistivity Ω . cm 10- 150 or as required 4 Orientation 5 Thickness μ m 6 Oxygen ppam 7 Carbon ppam 8 TTV/ TIR μ m...
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Cz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter 2” 3” 4” 6” 8” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <110>±1° , <100>±1° 4 Diameter mm 50.8±0.2 76.2±0.2 100±0.3 154±0.3 200±0.3 5 Thickness μ m 180- 1000 6 Resistivity &...
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Fz Ntd Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter 2” 3” 4” 5” 6” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <100><111>±2 ° 4 Thickness μ m 200- 2000( ±5 or ±10) 5 Resistivity Ω . cm 15- 600 6 RRV % ≤ 8 ≤ 10 &...
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Fz Single Crystal Silicon Wafer 2 Inch 3 4 6 8Components - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
FZ Single Crystal Silicon Wafer 2" 3” 4” 5" 6” at Western Minmetals (SC) Corporation Diameter: 2"3"4”5”6” Conducti vity Type: N type or P type Crystal Orientation: <100>, <111> Resistivity: 10-150 Ohm.cm RRV: 20% 25% max Thickness: 325, 3...
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Mcz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter mm 76.2- 200 ( 3” 4” 5’ 6” 8”) 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <100>, <110>, <111> 4 Thickness μ m 180- 1000±20, or as customer required 5 Resistivity Ω ...
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Single Crystal Silicon Epi Wafer 4 Inch 6 Inch 8 Inch At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation Diameter: 4" 6" 8" Substrate Layer Growth Method: CZ MCZ FZ Dopant: Boron / Phosphorus Conductivity Type: P / N Crystal Orientation: <100> <111> Thickness: 51...
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Fz Ntd Single Crystal Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch At Western Minmetals Sc CorpoComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 2"3"4”5”6” Conducti vity: N type or P type Crystal Orientation: <100> <111> +/-2degree Resistivity: 15-600 Ohm.cm RRV: 6% 8% 10% 12% max Thickness: 325, 375, 425, 525, 625, 1, 000um, or as required TTV: 10um max, Bow: 10um max, ...
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Single Crystal Silicon Prime Test Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch 8 Inch At Western MinmetaComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 2" 3" 4" 5” 6” 8" Conductivity Type: N type or P type Crystal Orientation: <100>, <111>, <110>+/-0.5degree R esistivity: 2.0-4.0 Ohm.cm, 4.0-7.0 Ohm.cm, 7.5-12.5 Ohm.cm RRV: 12% max Thickness: 350+/-15um, 420+/-20um, 525+/...
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Cz Single Crystal Silicon Wafer 2 Inch 3 Inch 4 Inch 6 Inch 8 InchComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 2"3"4"6"8" Growing Method: CZ Conductivity: N type or P type Crystal Orientation: <100> <110>+/-1degree Res istivity: 0.003-80 Ohm.cm RRV: 8% 10% 12% max Thickness: 180-1, 000um Primary Flat / Length: <110>+/-1degree, 16+/...
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Indium Phosphide Inp Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Ferrum / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 200-2, 000+/-5 or +/-10 um Crystal Orientation: <100> <111> Orientation Flat / Length: as SEMI Identification F...
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Indium Arsenide Inas Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Zinc Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: < 15 um Crystal Orientation: <100>+/-2degree, <111>+/-2degree, Alpha90...
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Gallium Phosphide Gap Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 50.8+/- 0.2 mm Dopant: None / Sulphur Conduct Type: SC/P Growth Method: LEC Thickness: 300+/-20 um Crystal Orientation: <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification Flat / Length: as SEMI Orientation / Identifi...
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Gallium Antimonide Gasb Single Crystal Wafer 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Diameter: 76.2+/- 0.2, 100+/-0.2 mm Dopant: None / Tellurium / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 625+/-25, 1, 000+/-25 um Crystal Orientation: <100> <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification...
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Indium Antimonide Insb Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$
Indium Antimonide (InSb) Single Crystal Wafer 2’’ at Western Minmetals (SC) Corporation Diameter: 50.8+/- 0.2 mm Dopant: None / Tellurium / Germanium Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: <...
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Silicon Carbide Single Crystal WafersElectronics - Manufacturing - China Leadmat Advanced Materials Co.,Ltd - China - November 14, 2012 - contact company for price
Ceramic Sputtering Targets 1, Boride Ceramic Sputtering Targets: Cr2B, CrB, CrB2, Cr5B3, FeB, HfB2 , LaB6, Mo2B, Mo2B5 , NbB, NbB2, TaB, TaB2, TiB2, W2B, WB, VB, VB2, ZrB2 2, Carbide Ceramic Sputtering Targets : B4C, Cr3C2, HfC, Mo2C, NbC, SiC, TaC, ...
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Single Crystal Silicon Solar IngotMetals - Other - Western Minmetal (SC) Corporation - China - September 16, 2014 - contact company for price
Ingot Diameter: 125x125, 156x156, 150±0.5mm, 200±0.5mm Conductivity Type: P/ Boron, N/ Phosphorus Growth Method: CZ Ingot Shape: Quasi- squared, Cylinder Orientation: <100>, <111>±2O Resistiv ity: 0.5- 3.0, 2.0- 4.0, 3.0- 6.0 ( Ω . c...
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Dc Switching Power Supply For Solar Silicon Single Crystal FurnaceEquipment - Electrical - Switches - Jiangsu Eastone Technology Co.,Ltd. - China - October 26, 2014 - contact company for price
I. Product Introduction As a DC voltage- regulating control power supply, the DC switching power supply for solar silicon single- crystal furnace adopts DSP and CPLD as the control core, IGBT as the power inverting device and high- ...
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Cz Fz Diode Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for price
No. Item Standard Specification 1 Diameter3” 4” 2 Conductivity Type 3 Growth method 4 Resistivity Ω . cm 5 Diameter mm 76.2±0.3 100±0.5 6 Thickness μ m 7 Orientation 8 TTV μ m 9 Bow/ Warp μ m 10 RRV % 11 Oxygen a/ cm3 12 Carbon a/...
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Cz Fz Diode Grade Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - May 30, 2014 - contact company for price
Conductivity: N type or P type Orientation: <100> +/ - 1 degree Resistivity: 5- 100 RRV: 10% , 12% or 25% Diameter: 3”4” 5” Thickness: ( 200- 600) +/ - 5µm Primary Flat: <110>+/ - 1º Length 32.5+/ - 1.5mm Secondary Flat: 180 degree from p...