18 China 
8 Brazil 
3 UK 
2 Netherlands 
2 Singapore 
2 India 
1 Tanzania 
1 Bangladesh 
1 Germany 
1 Taiwan 
1 Canada 
1 Japan 
1 Argentina 
Components - Other - page 72 - WorldBid B2B Market
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Indium Arsenide Inas Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Zinc Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: < 15 um Crystal Orientation: <100>+/-2degree, <111>+/-2degree, Alpha90...
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Indium Antimonide Insb Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Indium Antimonide (InSb) Single Crystal Wafer 2’’ at Western Minmetals (SC) Corporation Diameter: 50.8+/- 0.2 mm Dopant: None / Tellurium / Germanium Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: <...
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Indium Phosphide Inp Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Ferrum / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 200-2, 000+/-5 or +/-10 um Crystal Orientation: <100> <111> Orientation Flat / Length: as SEMI Identification F...
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Gallium Antimonide Gasb Single Crystal Wafer 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 76.2+/- 0.2, 100+/-0.2 mm Dopant: None / Tellurium / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 625+/-25, 1, 000+/-25 um Crystal Orientation: <100> <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification...
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Gallium Phosphide Gap Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2 mm Dopant: None / Sulphur Conduct Type: SC/P Growth Method: LEC Thickness: 300+/-20 um Crystal Orientation: <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification Flat / Length: as SEMI Orientation / Identifi...
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Gallium Arsenide Gaas Zn Doped Wafer 2 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm Dopant: Zinc Conduct Type: SC/P Growth Method: VGF Thickness: 220-350+/-20 um Crystal Orientation: <100>+/-0.5degree O rientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mm Identification Flat / Len...
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Gallium Arsenide Gaas Si Doped Wafer 2 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm Dopant: Silicon Conduct Type: SC/N Growth Method: VGF Thickness: 220-350+/-20 um Crystal Orientation: <100>+/-0.5degree O rientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mm Identification Flat / ...
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Gallium Arsenide Gaas Un Doped Semi Insulating Wafer Substrate 2 3 4 6 At WmcComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm 150+/-0.5mm Growth Method: VGF Dopant: None Thickness: 350-625+/-25um Crystal Orientation: <100>+/-0.5degree or +/-2.0degree Orientation Flat / Length: as SEMI, 16+/-1, 22+/-2 or 32+/-1 mm Ident...
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Silicon Soi Wafer 4 Inch 6 Inch 8 Inch At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Silicon SOI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation Diameter: 4" 6" 8" Handle Substrate Layer Growth Method: CZ MCZ FZ Conductivity Type: N type or P type Crystal Orientation: <100> <111> Resistivity: 1, 000 Ohm.cm min or as ...
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Single Crystal Silicon Epi Wafer 4 Inch 6 Inch 8 Inch At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation Diameter: 4" 6" 8" Substrate Layer Growth Method: CZ MCZ FZ Dopant: Boron / Phosphorus Conductivity Type: P / N Crystal Orientation: <100> <111> Thickness: 51...
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Single Crystal Silicon Prime Test Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch 8 Inch At Western MinmetaComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 2" 3" 4" 5” 6” 8" Conductivity Type: N type or P type Crystal Orientation: <100>, <111>, <110>+/-0.5degree R esistivity: 2.0-4.0 Ohm.cm, 4.0-7.0 Ohm.cm, 7.5-12.5 Ohm.cm RRV: 12% max Thickness: 350+/-15um, 420+/-20um, 525+/...
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Fz Ntd Single Crystal Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch At Western Minmetals Sc CorpoComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 2"3"4”5”6” Conducti vity: N type or P type Crystal Orientation: <100> <111> +/-2degree Resistivity: 15-600 Ohm.cm RRV: 6% 8% 10% 12% max Thickness: 325, 375, 425, 525, 625, 1, 000um, or as required TTV: 10um max, Bow: 10um max, ...