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Prefabricated And Integrated Foldable Container HouseConstruction - Building Materials - QHCC - Hong Kong - August 20, 2025 - 4000.00 Dollar US$Foldable Prefabricated House Overall Size:2438*5900*2620mm Top frame :Crossbeam 5480*2.0-2 2138*2.0-2, 210*150 corner piece-4, purlin 100*40*1.0, insulation cotton, iron sheet color steel plate 0.35mm, top guide rail, 0.25mm831 ceiling. Bottom frame ...
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Prefabricated And Integrated HouseConstruction - Commercial - QHCC - Hong Kong - July 29, 2025 - 6350.00 Dollar US$Mobile house-foldable house-Space capsule Product presentation Double wing expansion box room can be used by multiple up and down left and right splicing, to adapt to regional strength, only simple tools in the installation process, beautiful appeara...
crystal silicon prime test wafer western minmeta Photos Catalog - WorldBid B2B Market
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Single Crystal Silicon Prime Test Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch 8 Inch At Western MinmetaComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 2" 3" 4" 5” 6” 8" Conductivity Type: N type or P type Crystal Orientation: <100>, <111>, <110>+/-0.5degree R esistivity: 2.0-4.0 Ohm.cm, 4.0-7.0 Ohm.cm, 7.5-12.5 Ohm.cm RRV: 12% max Thickness: 350+/-15um, 420+/-20um, 525+/...
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Fz Ntd Single Crystal Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch At Western Minmetals Sc CorpoComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 2"3"4”5”6” Conducti vity: N type or P type Crystal Orientation: <100> <111> +/-2degree Resistivity: 15-600 Ohm.cm RRV: 6% 8% 10% 12% max Thickness: 325, 375, 425, 525, 625, 1, 000um, or as required TTV: 10um max, Bow: 10um max, ...
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Single Crystal Silicon Epi Wafer 4 Inch 6 Inch 8 Inch At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Single Crystal Silicon EPI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation Diameter: 4" 6" 8" Substrate Layer Growth Method: CZ MCZ FZ Dopant: Boron / Phosphorus Conductivity Type: P / N Crystal Orientation: <100> <111> Thickness: 51...
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Silicon Soi Wafer 4 Inch 6 Inch 8 Inch At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Silicon SOI Wafer 4" 6" 8" at Western Minmetals (SC) Corporation Diameter: 4" 6" 8" Handle Substrate Layer Growth Method: CZ MCZ FZ Conductivity Type: N type or P type Crystal Orientation: <100> <111> Resistivity: 1, 000 Ohm.cm min or as ...
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Gallium Phosphide Gap Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2 mm Dopant: None / Sulphur Conduct Type: SC/P Growth Method: LEC Thickness: 300+/-20 um Crystal Orientation: <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification Flat / Length: as SEMI Orientation / Identifi...
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Gallium Antimonide Gasb Single Crystal Wafer 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 76.2+/- 0.2, 100+/-0.2 mm Dopant: None / Tellurium / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 625+/-25, 1, 000+/-25 um Crystal Orientation: <100> <111>+/-0.5degree O rientation Flat / Length: as SEMI Identification...
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Indium Phosphide Inp Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Ferrum / Zinc Conduct Type: N / P Growth Method: LEC Thickness: 200-2, 000+/-5 or +/-10 um Crystal Orientation: <100> <111> Orientation Flat / Length: as SEMI Identification F...
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Indium Antimonide Insb Single Crystal Wafer 2 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Indium Antimonide (InSb) Single Crystal Wafer 2’’ at Western Minmetals (SC) Corporation Diameter: 50.8+/- 0.2 mm Dopant: None / Tellurium / Germanium Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: <...
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Indium Arsenide Inas Single Crystal Wafer 2 3 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm Dopant: None / Sulphur / Zinc Conduct Type: N / P Doping Level: > 2E18 /cm2 Growth Method: LEC Thickness: 500+/-25 um Warp: < 15 um Crystal Orientation: <100>+/-2degree, <111>+/-2degree, Alpha90...
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Fz Ntd Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for priceNo. Item Standard Specification 1 Diameter 2” 3” 4” 5” 6” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <100><111>±2 ° 4 Thickness μ m 200- 2000( ±5 or ±10) 5 Resistivity Ω . cm 15- 600 6 RRV % ≤ 8 ≤ 10 &...
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Cz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for priceNo. Item Standard Specification 1 Diameter 2” 3” 4” 6” 8” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <110>±1° , <100>±1° 4 Diameter mm 50.8±0.2 76.2±0.2 100±0.3 154±0.3 200±0.3 5 Thickness μ m 180- 1000 6 Resistivity &...
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Mcz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for priceNo. Item Standard Specification 1 Diameter mm 76.2- 200 ( 3” 4” 5’ 6” 8”) 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Orientation <100>, <110>, <111> 4 Thickness μ m 180- 1000±20, or as customer required 5 Resistivity Ω ...
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Single Crystal Silicon Bonding WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for priceNo. Item Standard Specification 1 Diameter 2” 4” 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Resistivity Ω . cm ≤ 0.0015 4 Diameter mm 50.8±0.2 100±0.3 5 Thickness μ m 425±25 625±25 6 Orientation 7 Primary length mm 16±1 32±2 8 TTV/...
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Fz Single Crystal Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - August 14, 2014 - contact company for priceNo. Item Standard Specification 1 Diameter mm 53- 150±0.2( 2” 3” 4” 5” 6”) 2 Conductivity Type P/ Boron, N/ Phosphorus 3 Resistivity Ω . cm 10- 150 or as required 4 Orientation 5 Thickness μ m 6 Oxygen ppam 7 Carbon ppam 8 TTV/ TIR μ m...
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Cz Single Crystal Silicon Wafer 2 Inch 3 Inch 4 Inch 6 Inch 8 InchComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 2"3"4"6"8" Growing Method: CZ Conductivity: N type or P type Crystal Orientation: <100> <110>+/-1degree Res istivity: 0.003-80 Ohm.cm RRV: 8% 10% 12% max Thickness: 180-1, 000um Primary Flat / Length: <110>+/-1degree, 16+/...
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Fz Single Crystal Silicon Wafer 2 Inch 3 4 6 8Components - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$FZ Single Crystal Silicon Wafer 2" 3” 4” 5" 6” at Western Minmetals (SC) Corporation Diameter: 2"3"4”5”6” Conducti vity Type: N type or P type Crystal Orientation: <100>, <111> Resistivity: 10-150 Ohm.cm RRV: 20% 25% max Thickness: 325, 3...
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Gallium Arsenide Gaas Si Doped Wafer 2 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm Dopant: Silicon Conduct Type: SC/N Growth Method: VGF Thickness: 220-350+/-20 um Crystal Orientation: <100>+/-0.5degree O rientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mm Identification Flat / ...
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Gallium Arsenide Gaas Zn Doped Wafer 2 3 4 At Western Minmetals Sc CorporationComponents - Other - Western Minmetal (SC) Corporation - China - December 24, 2017 - 1.00 Dollar US$Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm Dopant: Zinc Conduct Type: SC/P Growth Method: VGF Thickness: 220-350+/-20 um Crystal Orientation: <100>+/-0.5degree O rientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mm Identification Flat / Len...
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High Purity Silicon Dioxide At Western Minmetals Sio2 99 999 PercentChemicals - Oxide - Western Minmetals (SC) Corporation - China - December 15, 2017 - check with company for priceHigh Purity Silicon Dioxide is mainly used to produce elemental silicon, optical glass, optical fiber and as coating materials. It is also a primary raw material for elctronic components. 1.SiO2≥99.999% 2.Impuri ty Max each Al/Fe/Pb/Ti/Mg 1ppm, Cr/Mn...
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Cz Fz Diode Grade Silicon WaferComponents - Other - Western Minmetal (SC) Corporation - China - May 30, 2014 - contact company for priceConductivity: N type or P type Orientation: <100> +/ - 1 degree Resistivity: 5- 100 RRV: 10% , 12% or 25% Diameter: 3”4” 5” Thickness: ( 200- 600) +/ - 5µm Primary Flat: <110>+/ - 1º Length 32.5+/ - 1.5mm Secondary Flat: 180 degree from p...